Threshold-based voltage reference with pn- junction temperature compensation

Yen-Ting Wang, R. Geiger, Shu-Chuan Huang
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引用次数: 2

Abstract

A new voltage reference with output dependent upon the threshold voltage of an NMOS transistor is introduced. A low temperature coefficient is achieved by using a pn-junction PTAT current generator to compensate for the negative temperature coefficient of the threshold voltage. Implemented in a standard 0.6µm CMOS process with an output of 1.67V, it has a temperature coefficient of 4.9ppm/°C over a 195 °C range.
基于阈值的参考电压与pn结温度补偿
介绍了一种新的电压基准,其输出依赖于NMOS晶体管的阈值电压。低温系数是通过使用pn结PTAT电流发生器来补偿阈值电压的负温度系数来实现的。在标准的0.6µm CMOS工艺中实现,输出为1.67V,在195°C范围内的温度系数为4.9ppm/°C。
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