S. Tsujikawa, T. Mine, Y. Shimamoto, O. Tonomura, R. Tsuchiya, K. Ohnishi, H. Hamamura, K. Torii, T. Onai, J. Yugami
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引用次数: 12
Abstract
We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.