Magneto-plasmon modes in a semiconductor under intense terahertz laser radiation

W. Xu
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Abstract

In this paper, we study theoretically how a linearly polarised intense laser field affects the magneto-plasmon modes in a semiconductor-based electron gas system. Using time-dependent condensed matter theory, we have obtained the electron density of states and the plasmon spectrum in the spectrum representation, and we have investigated the dependence of the magneto-plasmon excitation and the Fermi energy on frequency and intensity of the laser field and on magnetic field in GaAs material. The results are pertinent to the application of terahertz free-electron laser sources developed very recently.
强太赫兹激光辐射下半导体的磁等离子体模式
本文从理论上研究了线极化强激光场对半导体基电子气体系统中磁等离子体模式的影响。利用时间相关凝聚态理论,得到了能谱表示中的电子态密度和等离子体谱,研究了GaAs材料中磁等离子体激发和费米能量对激光场频率和强度以及磁场的依赖关系。这些结果与最近发展起来的太赫兹自由电子激光源的应用有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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