Avalanche Multiplication in Schottky-type AlGaN Photodiode with High Al-composition

Huan Yan, Changshan Liu, Hailong Wang, Zhenhua Zhang, Meng Chen, Hao Jiang
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Abstract

Shottky–type Al0.6Ga0.4N solar-blind avalanche photodiodes have been fabricated and characterized under front and back illuminated conditions. The photodiodes exhibited dark currents below 1pA in the measuring range. Photocurrent under front illumination was lower than photocurrent under back illumination in the reverse-bias region below 35 V, but then exceeded the latter as the reverse bias became larger. Impact ionization coefficient for electrons is larger than that for holes as derived from the gain-voltage curves under the front and back illuminations.
高铝成分肖特基型AlGaN光电二极管的雪崩倍增
制备了shottky型Al0.6Ga0.4N太阳盲雪崩光电二极管,并在前后照明条件下对其进行了表征。在测量范围内,光电二极管的暗电流低于1pA。在反向偏置区域,在35 V以下,正面照明的光电流低于背面照明的光电流,但随着反向偏置的增大而超过后者。从前后照度下的增益电压曲线可知,电子的冲击电离系数大于空穴的冲击电离系数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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