A Wideband Low Phase Noise Harmonic Shaping Class-F23 Oscillator in 65 nm CMOS Technology

Shuai Deng, Xiongyao Luo, Xiang Yi, Pei Qin, Taotao Xu, Cao Wan, Q. Xue
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Abstract

This paper presents a novel wideband low phase-noise harmonic-shaping $\text{Class}-\mathrm{F}_{23}$ voltage-controlled oscillator (VCO). The utilization of a discrete high-quality-factor $(Q)$ multi{###} $LC$ tank in the VCO results in multiple impedance peaks under both differential mode (DM) and common mode (CM), allowing harmonic components to shape the output waveform over the wide tuning range, without the need of manual tuning. As a result, the phase noise performance can be significantly improved. For demonstration, an oscillator is implemented in TSMC 65-nm CMOS. The tuning range of the oscillator is from 6.52 GHz to 8.52 GHz with phase noise (PN) lower than -120.1 dBc/Hz and the figure of merit (FoM) higher than 190.3 dBc/Hz at 1 MHz frequency offset.
65纳米CMOS技术中宽带低相位噪声谐波整形类f23振荡器
本文提出了一种新型的宽带低相位噪声谐波整形$\text{Class}- $ maththrm {F}_{23}$压控振荡器(VCO)。在VCO中使用离散高质量因数$(Q)$ multi{###} $LC$油箱可在差分模式(DM)和共模模式(CM)下产生多个阻抗峰值,从而允许谐波分量在宽调谐范围内塑造输出波形,而无需手动调谐。因此,相位噪声性能可以得到显著改善。为了演示,在台积电65nm CMOS上实现了一个振荡器。振荡器的调谐范围为6.52 GHz ~ 8.52 GHz,相位噪声(PN)低于-120.1 dBc/Hz,在1mhz频偏下,性能因数(FoM)高于190.3 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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