Atomic Vapor Deposition (AVD®) for High-k Dielectric and Ferroelectric films

Abstract

The deposition of metal oxide thin films by metal-organic chemical vapor deposition is a good solution for the fabrication of high-k gate oxide and ferroelectric oxides for ferroelectric random access memories. The main challenges to be addressed in order to meet mass-production worthiness of this technique are reproducible and clean vaporization and transport of the precursor materials as well as process optimization for high quality thin films. The use of short pulses for the delivery of liquid precursor presents some advantages for meeting these requirements.