Low voltage surface transverse wave oscillators for the next generation CMOS technology

I. Avramov
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引用次数: 8

Abstract

The design and performance of surface transverse wave (STW) based VCOs (VCSO) in the lower GHz frequency range, operating on supply and tuning voltages in the 1.2 to 3.3 V range, are presented. The VCSO outputs are switched between 0 V and the positive supply voltage U/sub S/ to provide safe CMOS-circuit switching while keeping the RF/DC efficiency to a maximum for low DC power consumption. This is achieved by operating the active oscillator circuit in one of the switched nonlinear classes that are known for their high power and efficiency, and low phase noise. The investigated 1.0 and 2.5 GHz VCSOs are varactor tuned feedback-loop oscillators stabilized with two-port STW resonators. Each VCSO has a DC coupled high-impedance switched output to drive the CMOS circuit directly, and an additional sinusoidal 50 /spl Omega/ high-power output available for other low-noise system applications. Phase noise levels in the -103 to -115 dBc/Hz at 1 kHz carrier offset are achieved with a 1 GHz VCSO at an RF/DC efficiency in the 21 to 29% range. The 2.5 GHz prototypes demonstrate phase noise levels in the -97 to -102 dBc/Hz at 1 kHz carrier offset and efficiencies range between 8 and 15%.
用于下一代CMOS技术的低压表面横波振荡器
介绍了基于表面横波(STW)的低GHz频率vco (VCSO)的设计和性能,工作电压在1.2 ~ 3.3 V范围内。VCSO输出在0 V和正电源电压U/sub / S/之间切换,以提供安全的cmos电路切换,同时保持RF/DC效率达到最大,以实现低直流功耗。这是通过在一个开关非线性类中操作有源振荡器电路来实现的,该非线性类以其高功率、高效率和低相位噪声而闻名。所研究的1.0 GHz和2.5 GHz vcso是由两端口STW谐振器稳定的变容管调谐反馈回路振荡器。每个VCSO都有一个直流耦合高阻抗开关输出直接驱动CMOS电路,以及一个额外的正弦50 /spl ω /高功率输出,可用于其他低噪声系统应用。在1 kHz载波偏置下-103至-115 dBc/Hz的相位噪声水平可通过1 GHz VCSO在21%至29%的RF/DC效率范围内实现。2.5 GHz样机在1 kHz载波偏置下的相位噪声水平为-97至-102 dBc/Hz,效率范围在8%至15%之间。
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