Monte-Carlo Modeling of Photoelectron Kinetics in Quantum-Dot Photodetectors

Abstract

Using Monte-Carlo method, we simulate kinetics and transport of electrons in different types of InAs/GaAs quantum-dot infrared photodetectors. Our simulation program exploits Gamma-L-X model of the conduction band of semiconductor and it includes three major types of electron scattering on: 1) acoustic phonons, 2) polar optical phonons, and 3) intervalley phonons. The results of simulation demonstrate that the combination of local potential barriers around quantum dots and quantum-dot structure with collective barriers can be used to achieve long carrier lifetimes, and therefore high photoconductive gain, responsivity, and detectivity.