Improved Modified Materka Model for Simulation of Pinch-Off Variation in PHEMT Devices

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282670

P. White, W. Stiebler, P. Balas

引用次数: 3

Abstract

An improved modified Materka I-V model for PHEMT devices is described which enables pinch-off variation to be properly simulated by adjusting a single parameter. The improved formulation is based on including the built-in potential in the definition of gate bias. The model is validated experimentally using data from a production PHEMT process

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PHEMT器件掐断变化模拟的改进修正Materka模型

本文描述了一种改进的PHEMT器件的Materka I-V模型，该模型可以通过调整单个参数来适当地模拟掐断变化。改进的公式是基于在栅极偏置的定义中包含内置电位。利用PHEMT生产过程的数据对该模型进行了实验验证

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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