A 28-GHz band highly linear power amplifier with novel adaptive bias circuit for cascode MOSFET in 56-nm SOI CMOS

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-12-01 DOI:10.1109/EDSSC.2017.8126403

Hiroya Sato, M. Yanagisawa, T. Yoshimasu

引用次数: 3

Abstract

This paper presents a highly linear 28-GHz band SOI CMOS power amplifier with an adaptive bias circuit for cascode MOSFET for next generation wireless communication. The power amplifier consists of a cascode MOSFET, the adaptive bias circuit and the input and output matching circuits. The power amplifier has exhibited a simulated output P1dB (1-dB gain compression point) of 19.2 dBm and a PAE of 39.0 %.

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基于新型自适应偏置电路的级联MOSFET的28ghz高线性功率放大器

本文提出了一种用于下一代无线通信的高线性28 ghz频带SOI CMOS功率放大器，该放大器具有用于级联码MOSFET的自适应偏置电路。该功率放大器由级联码MOSFET、自适应偏置电路和输入输出匹配电路组成。该功率放大器的模拟输出P1dB (1-dB增益压缩点)为19.2 dBm, PAE为39.0%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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