Gallium Nitride Cylindrical Schottky Barrier MOSFET(GaN-CSB-MOSFET) For High-Frequency Implementation

Abstract

Gallium Nitride Cylindrical Schottky Barrier MOSFET(GaN-CSB-MOSFET) using Aluminium Oxide (Al2O3) as gate oxide have been simulated and examined. The GaN-based system offers wider bandgaps, good transport properties, and a high breakdown field. The proposed devices display a minimum subthreshold slope (SS) of 67 mV/dec and a lower threshold voltage. Parameters like $\mathrm{V}_{\text{ds}},\ \mathrm{g}_{\mathrm{m}},\ \mathrm{g}_{\mathrm{d}},\ \mathrm{f}_{\mathrm{T}},\ \mathrm{C}_{\text{GG}}$, UPG, MTPG, and FTP show better results in GaN-CSB-MOSFET than Silicon Cylindrical Schottky barrier (Si-CSB) MOSFET. These performance metrics make GaN-CSB-MOSFET a promising contender for evolving low-power applications, such as sensors and RF for the Internet of Things.