Investigation into Enhancing the Gate Electric Field of Transistor

IRPN: Science Pub Date : 2016-04-12 DOI:10.2139/ssrn.2763424
S. Dahiya, Pawan Kumar Singhal
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Abstract

The use of electronic devices is increasing day by day in form of static as well as dynamic devices and simultaneously the energy consumption of these devices is increasing because of requirement of information processed is increasing. There is a social need to reduce the power consumption of these devices. Over four decades the efforts of minimizing the transistor size for new and minimized products has introduced new challenges in designing the transistors. As per the technology roadmap for semiconductors, the reduction in power consumption of the MOSFETs used in today's electronic circuits is reaching the fundamental limit and these days new type of device structures are being investigated as possible replacements for traditional metal-oxide-semiconductor field effect transistors (MOSFETs).
增强晶体管栅极电场的研究
电子设备的使用日益增加,既有静态设备,也有动态设备,同时由于处理信息的要求越来越高,这些设备的能耗也越来越大。社会需要降低这些设备的功耗。四十多年来,人们一直在努力将晶体管的尺寸缩小到最小,这给晶体管的设计带来了新的挑战。根据半导体技术路线图,当今电子电路中使用的mosfet的功耗降低正在达到基本极限,这些天正在研究新型器件结构作为传统金属氧化物半导体场效应晶体管(mosfet)的可能替代品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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