Semiconductor Surface State Engineering for THz Nanodevices

Abstract

This chapter is dedicated to study the semiconductor surface states, which com-bined with nanolithography techniques could result on remarkable properties of advanced nanodevices suitable for terahertz (THz) signal detection or harvesting. The author presents the use of low-dimensional semiconductor heterostructures for the development of the so-called self-switching diodes (SSDs), studying by simulation tool key parameters in detail such as the shape and size of the two-dimensional electron gas system. The impact of the geometry on the working principle of the nanodevice and the effects on current-voltage behavior will be described in order to acquire design guidelines that may improve the performance of the self-switching diodes when applied to low-power square-law rectifiers as well as elements in rectennas by appropriately setting the size of the components.