A 5 ∼14GHz Wideband LNA using 0.13μm SiGe BiCMOS Technology

Abstract

A Wideband low-noise amplifier (LNA) designed and implemented in 0.13 μm SiGe BiCMOS technology is presented in this paper. The inductive peaking technology is adopted to expand the bandwidth, the resistance negative feedback technology and the emitter degeneration inductive technology are adopted to improve the flatness of gain and input matching. This LNA achieves a flat gain of 10.7∼ 12.9 dB in the frequency range of $5\sim 14$ GHz. The noise figure $(NF)$ of the LNA is 3.5∼ 6.1 dB across the band. The input return losses (S11) of the LNA are better than -10 dB. The LNA dissipates 9.4mA with a 3.3 V supply.