Narrow-gap MCT as THz detector

Abstract

Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1−xCdxTe semiconductor bolometers that can be used as sensitive elements in THz sensitive arrays, are considered. The response of Hg1−xCdxTe warm-electron bolometer was measured in ν=0.037−1.54 THz frequency range at T=68-300 K. In the detector (bolometer) considered the electromagnetic wave heats electrons and holes there, creates their excess concentrations, as well as, the electromotive force. These effects cause the bolometer response voltage. The noise equivalent power can reach NEP300K∼2.5×10−10 W/Hz1/2 at radiation frequency ν=140 GHz.