Stoichiometry-dependent vacancy formation in n-doped GaAs

J. Gebauer, M. Lausmann, R. Krause-Rehberg
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Abstract

The formation of vacancies in n-doped GaAs with variable stoichiometry was studied by means of positron annihilation. Highly Te-doped (n=1.5-5/spl times/10/sup 18/ cm/sup -3/) GaAs samples were annealed at high temperatures under variable arsenic vapor pressure (p/sub As/) and rapidly quenched to room temperature. We found that monovacancies exist in Te-doped GaAs regardless of the annealing conditions. In contrast, the vacancy concentration was found to be dependent on p/sub As/, i.e. on the stoichiometry. The vacancy concentration increases like p/sub As//sup 1/4/ and saturates at high As pressures (3-6 bar). This is a proof that the dominant vacancies in Te-doped As-rich GaAs are related to Ga vacancies, in agreement to theoretical results. Moreover, the vacancies were independently identified by using the Doppler broadening coincidence technique.
n掺杂砷化镓中化学计量相关的空位形成
用正电子湮灭的方法研究了变化学计量n掺杂砷化镓中空位的形成。高te掺杂(n=1.5-5/spl倍/10/sup 18/ cm/sup -3/) GaAs样品在变砷蒸气压(p/sub As/)下进行高温退火,并快速淬火至室温。我们发现,无论退火条件如何,掺te的GaAs中都存在单空位。相反,空位浓度与p/sub As/有关,即与化学计量有关。空位浓度以p/sub / As/ sup / 1/4/的速率增加,并在高压下(3-6 bar)达到饱和。这证明了掺te富as GaAs中的主导空位与Ga空位有关,与理论结果一致。此外,利用多普勒增宽符合技术独立识别了空位。
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