{"title":"Stoichiometry-dependent vacancy formation in n-doped GaAs","authors":"J. Gebauer, M. Lausmann, R. Krause-Rehberg","doi":"10.1109/SIM.1998.785093","DOIUrl":null,"url":null,"abstract":"The formation of vacancies in n-doped GaAs with variable stoichiometry was studied by means of positron annihilation. Highly Te-doped (n=1.5-5/spl times/10/sup 18/ cm/sup -3/) GaAs samples were annealed at high temperatures under variable arsenic vapor pressure (p/sub As/) and rapidly quenched to room temperature. We found that monovacancies exist in Te-doped GaAs regardless of the annealing conditions. In contrast, the vacancy concentration was found to be dependent on p/sub As/, i.e. on the stoichiometry. The vacancy concentration increases like p/sub As//sup 1/4/ and saturates at high As pressures (3-6 bar). This is a proof that the dominant vacancies in Te-doped As-rich GaAs are related to Ga vacancies, in agreement to theoretical results. Moreover, the vacancies were independently identified by using the Doppler broadening coincidence technique.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The formation of vacancies in n-doped GaAs with variable stoichiometry was studied by means of positron annihilation. Highly Te-doped (n=1.5-5/spl times/10/sup 18/ cm/sup -3/) GaAs samples were annealed at high temperatures under variable arsenic vapor pressure (p/sub As/) and rapidly quenched to room temperature. We found that monovacancies exist in Te-doped GaAs regardless of the annealing conditions. In contrast, the vacancy concentration was found to be dependent on p/sub As/, i.e. on the stoichiometry. The vacancy concentration increases like p/sub As//sup 1/4/ and saturates at high As pressures (3-6 bar). This is a proof that the dominant vacancies in Te-doped As-rich GaAs are related to Ga vacancies, in agreement to theoretical results. Moreover, the vacancies were independently identified by using the Doppler broadening coincidence technique.