Short-circuit capability in p-GaNHEMTs and GaNMISHEMTs

Abstract

Gallium Nitride (GaN) Enhancement-mode High-Electron-Mobility Transistors (EHEMTs) are promising devices for motor drives. Hence, ensuring and gaining insight into their ruggedness against Short-Circuit (SC) faults become essential. Thus, SC stresses (types I and II) are studied for the first time in commercial EHEMTs with similar on-state resistance (∼ 100 mΩ) and breakdown voltage (∼ 600 V). As SC failure mechanisms, thermal (SC I) and dielectric (SC II) breakdown are identified.