Electrical Noise Behaviour of High-k Gate-All-Around MOSFET Based on Two-Port Device Network Analysis

Abstract

This work investigates the numerical analysis based on multiple noise figures of merit in a high-k gate-all-around MOSFET by considering two-port device analysis. The noise in the device is calculated by analyzing the statistical behavior of random voltage sources at the terminals of the MOSFET represented as a two-port system. Although, HfO2 based GAA MOSFET device shows better ON-state current, yet, the device shows degradation in minimum noise figure, autocorrelation, cross-correlation, optimum source impedance, and noise conductance when compared to SiO2 based devices.