{"title":"Processing and Characterization of Die-attach on Uncoated Copper by Pressure-less Silver Sintering and Low-pressure-assisted Copper Sintering","authors":"Meiyu Wang, Yanliang Shan, Y. Mei, Xin Li, G. Lu","doi":"10.23919/ICEP.2019.8733553","DOIUrl":null,"url":null,"abstract":"Die-attach by metal-powder sintering is being widely adopted in the power electronics industry for manufacturing power semiconductor discrete devices and modules. Thus far, the most widely practiced process involves pressure-assisted silver sintering on direct-bond copper (DBC) substrates that are surface-finished with a coating of silver or gold. In this paper, sintering die-attach processes were done on native DBC substrates by pressure- less sintering of a silver paste and pressure-assisted sintering of a copper paste. To prevent copper oxidation, the silver die-attach process was done in a mixture of formic- acid gas and air, while the copper process in forming-gas (4%H2/N2). The effects of sintering atmosphere, temperature, and pressure on die shear strength were investigated. We achieved strong die-shear strength and oxidation-free sintered bond-line with either bonding process under less stringent demands on materials and processing conditions for low-cost implementation of the die-attach technology in manufacturing.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Die-attach by metal-powder sintering is being widely adopted in the power electronics industry for manufacturing power semiconductor discrete devices and modules. Thus far, the most widely practiced process involves pressure-assisted silver sintering on direct-bond copper (DBC) substrates that are surface-finished with a coating of silver or gold. In this paper, sintering die-attach processes were done on native DBC substrates by pressure- less sintering of a silver paste and pressure-assisted sintering of a copper paste. To prevent copper oxidation, the silver die-attach process was done in a mixture of formic- acid gas and air, while the copper process in forming-gas (4%H2/N2). The effects of sintering atmosphere, temperature, and pressure on die shear strength were investigated. We achieved strong die-shear strength and oxidation-free sintered bond-line with either bonding process under less stringent demands on materials and processing conditions for low-cost implementation of the die-attach technology in manufacturing.