Electrical properties of Pb(Zr,Ti)O3/CeO2/Si MFIS structure fabricated by chemical mechanical polishing (CMP) damascene process

Abstract

Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.