Three-independent gate FET's super steep subthreshold slope

Abstract

The device characteristics of TIGFET technology, in particular the steep subthreshold slope (SS), have been studied in detail in this chapter. Notably, we have (1) summarized TIGFET's working principle and fabrication techniques, (2) reviewed experimental demonstrations of SSmin in TIGFETs with respect to voltage and temperature, and (3) performed device-level simulations to display and thoroughly explain the SS capabilities of TIGFETs with respect to channel length and voltage. Our results allow us to develop an in-depth explanation into the origin of steep SS and the potential limitations of SS in TIGFETs due to short-channel effects.