Design of X-band 4×4 On-chip Butler Matrix Based on 0.18µm SiGe BiCMOS Process

Abstract

In this paper, an X-band 4×4 on-chip butler matrix is presented based on 0.18$\mu$m SiGe BiCMOS process. The matrix, implemented by lumped components such as inductors and capacitors, shows broadband performance with the size less than 2mm2. The measurement results are consistent with simulation ones.