Properties of evaporated ge thin-films for warm carrier devices

N. Inoue, Y. Yasuoka
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Abstract

Recently, there has been growing interest in thin-film antenna-coupled infrared laser detectors. In the thin-film infrared laser detectors, the warm carrier devices have been fabricated using the single crystal Ge wafer(1). But if these devices could be fabricated by using Ge thin-films deposited on insulating substrates, it would be attractive for flexibility of fabrication of the device structure. The responsivity of these devices, on the other hand, is proportional to the carrier mobility of semiconductor films(2). Therefore, semiconducting-films with large carrier mobility are necessary instead of the single crystal Ge wafer.
热载流子器件用蒸发锗薄膜的性能
近年来,人们对薄膜天线耦合红外激光探测器越来越感兴趣。在薄膜红外激光探测器中,热载流子器件是用单晶锗硅片(1)制成的。但是,如果这些器件可以通过在绝缘衬底上沉积锗薄膜来制造,那么它将在器件结构的制造灵活性方面具有吸引力。另一方面,这些器件的响应度与半导体薄膜的载流子迁移率成正比(2)。因此,需要具有大载流子迁移率的半导体薄膜来代替单晶锗片。
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