Performance analysis of Si/SiGe double junction solar cell

Abstract

In this paper, performance of Si/Si1-xGex thin film double junction solar cell is analyzed. Variation of efficiency of individual subcells and overall efficiency of the device has been studied with Ge-content and other device parameters viz., thickness of different subcells. Choice of Ge-content in SiGe layer and thickness of the top cell are very important to obtain optimized efficiency of the device. Efficiency increases initially with x and after a particular value of x, it decreases. More than 20% maximum efficiency is obtained for x=0.28, and for the thickness of top and bottom cells are 0.2μm and 0.12μm respectively.