4nm Voltage Auto-Tracking SRAM Pulse Generator with Fully RC Optimized Row Auto-Tracking Write Assist Circuits

Abstract

Providing performance-and-power optimized SRAM compiler with wide a range of operating voltages and configurations is a major challenge in advanced technologies. In this paper, the Row Auto-Tracking Write Assist (RATWA) and Voltage Auto-Tracking Pulse Generator (VATPG) are proposed to overcome major two issues in the SRAM compiler. The RATWA efficiently controls the strength of write assist under various types of SRAM RPB (Rows Per Bitline), and it demonstrates a 7% dynamic power improvement, especially at 64 RPB. The VATPG adaptively adjusts the gate level of the tracking circuit and shows a stable read margin across a wide range of voltages, up to 22% SRAM read speed improvement, and 9% dynamic power saving at higher voltage ranges.