Ultra low frequency CMOS ring oscillator design

A. Mahato
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引用次数: 12

Abstract

In this paper, the concept of CMOS thyristor has been used to implement low frequency ring oscillator using 2.5 volt power-supply and 1pF load capacitance using 250nm technology. By using the conventional CMOS thyristor structure the frequency of the output sinusoidal waveform is of the order of KHz, which has been further improved in proposed CMOS thyristor based ring oscillator. The frequency of the output sinusoidal waveform in the proposed structures is of the order of few Hz. In addition to this static power dissipation of the CMOS ring oscillator has been further improved in the proposed CMOS thyristor based ring oscillator.
超低频CMOS环形振荡器设计
本文采用CMOS晶闸管的概念,采用2.5伏电源和1pF负载电容,采用250nm技术实现低频环形振荡器。在传统CMOS晶闸管结构的基础上,输出正弦波形的频率为KHz,在基于CMOS晶闸管的环形振荡器中得到了进一步提高。在所提出的结构中,输出正弦波形的频率是几赫兹的数量级。除此之外,本文提出的基于CMOS晶闸管的环形振荡器还进一步改善了CMOS环形振荡器的静态功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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