Ming-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Y. Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lina Huang, Chao-Ching Cheng, W. Woon, S. Liao, Chih-I Wu, Lain‐Jong Li, I. Radu, H. P. Wong, Han Wang
{"title":"Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor","authors":"Ming-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Y. Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lina Huang, Chao-Ching Cheng, W. Woon, S. Liao, Chih-I Wu, Lain‐Jong Li, I. Radu, H. P. Wong, Han Wang","doi":"10.1109/vlsitechnologyandcir46769.2022.9830376","DOIUrl":null,"url":null,"abstract":"A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 µA/µm and 243 µA/µm at VDS = 1 V, and record low contact resistance of 0.63 kΩ•µm and 0.73 kΩ•µm, respectively.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830376","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 µA/µm and 243 µA/µm at VDS = 1 V, and record low contact resistance of 0.63 kΩ•µm and 0.73 kΩ•µm, respectively.