Absence of Space-Charge-Limited Current from Abnormal Field Emission in Collisional Diode

L. Ang, C. Chua, Y. Ang
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Abstract

For field emission in a vacuum or solid diode, its current density is expected to be governed by the Child-Langmuir [1] or Mott-Gurney laws [2] law at sufficiently high voltage. Recently, we reported that for field emission not obeying the classical Fowler-Nordheim (FN) law [3] , the two-stage transition from source-limited field emission (FE) to space-charge-limited current (SCLC) is no longer valid [4] . Using a generalized FN scaling of ln(J/F k ) □ 1/F, where J is the current density and F is the applied field, we study the effects of different k to the current density-voltage (J-V) transition characteristic. For a vacuum diode, if the value of k is smaller than k crit =1.5, we will have pure FE with absolute absence of SCLC or 3-stage FE-to-SCLC-to-FE, depending on the size of the diode D. We extend the model to a solid diode (collisional transport), and the corresponding critical value becomes k crit =2. The transition behavior is more complicated, which depends not only on D, but also the electron mobility μ in the solid. Our findings provide a theoretical foundation for modelling unconventional field emission injection in both ballistic and collisional regimes, which is significant for various applications [5] in vacuum electronics, beam physics, gas-based diode, plasma, and dielectric.
碰撞二极管异常场发射中空间电荷限制电流的缺失
对于真空或固体二极管中的场致发射,在足够高的电压下,其电流密度预计受Child-Langmuir[1]或Mott-Gurney[2]定律的支配。最近,我们报道了不符合经典Fowler-Nordheim (FN)定律的场发射[3],从源限场发射(FE)到空间电荷限电流(SCLC)的两阶段转变不再有效[4]。采用广义FN标度ln(J/F k)□1/F,其中J为电流密度,F为外加电场,研究了不同k对电流密度-电压(J- v)跃迁特性的影响。对于真空二极管,如果k值小于k临界值=1.5,则根据二极管d的大小,我们将得到纯FE,绝对没有SCLC或3级FE- SCLC- FE,我们将模型扩展到固体二极管(碰撞输移),相应的临界值变为k临界值=2。相变行为较为复杂,不仅与D有关,还与固体中的电子迁移率μ有关。我们的研究结果为在弹道和碰撞状态下模拟非常规场发射注入提供了理论基础,这对于[5]在真空电子学、束流物理、气基二极管、等离子体和电介质中的各种应用具有重要意义。
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