Design and Performance of Oscillators Using Semiconductor Delay Lines

S. Burns, G. R. Kline, K. Lakin
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引用次数: 8

Abstract

Bulk-acoustic-wave piezoelectric thin-film technology has been used to synthesize delay lines at microwave frequencies in semiconductor substrates. These structures use either ZnO or AlN for piezoelectric transduction, suitably positioned electrodes for applying an ac signal, and reflecting surfaces for guiding the acoustic energy. the top-side of the semiconductor wafer. We can incorporate these delay structures as the feedback element in an oscillator and exploit the 2n periodicity in these structures to obtain a comb generator output. delay-line oscillators operating near 1 GHz and 3 MHz spectral line spacing. exceeds -90 dBc/Hz at 1 kHz. Design and analysis is based upon the use of SPICE 2G linear circuit models. Because the transducer fabrication process uses semiconductor processing technology as its basis, the synthesis of these oscillators is being studied as an integrable alternative to other technologies. The delay lines are accessed entirely
半导体延迟线振荡器的设计与性能
体声波压电薄膜技术已被用于在半导体衬底上合成微波频率的延迟线。这些结构使用ZnO或AlN进行压电转导,适当定位的电极用于施加交流信号,反射表面用于引导声能。半导体晶圆片的顶部我们可以将这些延迟结构作为振荡器的反馈元件,并利用这些结构中的2n周期性来获得梳状发生器输出。工作在1 GHz和3 MHz谱线间距附近的延迟线振荡器。在1khz时超过- 90dbc /Hz。设计和分析是基于使用SPICE 2G线性电路模型。由于换能器制造工艺以半导体加工技术为基础,因此这些振荡器的合成正在研究中,作为其他技术的可积替代品。延迟线被完全访问
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