A new procedure for lifetime prediction of n-channel MOS-transistors using the charge pumping technique

Abstract

A new procedure is proposed for a reliable lifetime prediction of MOS-transistors under hot-carrier stressing. This procedure is based on the measurement of the charge pumping current increase during the degradation. Unlike procedures based on threshold voltage (or transconductance) shifts, the new method is shown to be a better monitor for the hot-carrier degradation and is applicable for a wider range of stress conditions. It is also demonstrated that the procedure provides a more reliable lifetime prediction, especially under alternating stress conditions or under low-frequency dynamic stress conditions.<>