Multilevel 2-cell t-write codes

A. Bhatia, Aravind R. Iyengar, P. Siegel
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引用次数: 13

Abstract

We consider t-write codes for write-once memories with cells that can store multiple levels. Using worst-case sum-rate optimal 2-cell t-write code constructions for the asymptotic case of continuous levels, we derive 2-cell t-write code constructions that give good sum-rates for cells that support q discrete levels. A general encoding scheme for q-level 2-cell t-write codes is provided.
多级2单元t-write代码
我们将t-write代码用于一次性写入存储器,这些存储器具有可存储多个级别的单元格。对于连续水平的渐近情况,我们使用最坏情况和速率最优2-cell t-write代码结构,我们推导出2-cell t-write代码结构,为支持q个离散水平的细胞提供良好的和速率。给出了q级2单元t-write码的通用编码方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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