{"title":"Surface plasmon enhanced strong exciton-photon coupling of semiconductor nanowires","authors":"Qing Zhang","doi":"10.1117/12.2594566","DOIUrl":null,"url":null,"abstract":"Exploring exciton-polariton effects in low dimensional semiconductors with large oscillation strength provides solutions to develop low threshold lasers and low-energy consumption, fast photonic interconnections. In this talk, I will introduce our recent results on surface plasmon enhanced exciton-polariton of perovskite nanowires. We find that Rabi splitting energy of MAPbBr3 nanowires is enhanced by 40% by adopting a semiconductor nanwire/dielectric/Ag film sandwich structure. A Rabi splitting energy up to 595 meV is achieved as the dielectric thickness is 5 nm. Later, we demonstrated a room temperature, low-threshold green plasmonic laser in the same configuration.","PeriodicalId":118068,"journal":{"name":"Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2594566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Exploring exciton-polariton effects in low dimensional semiconductors with large oscillation strength provides solutions to develop low threshold lasers and low-energy consumption, fast photonic interconnections. In this talk, I will introduce our recent results on surface plasmon enhanced exciton-polariton of perovskite nanowires. We find that Rabi splitting energy of MAPbBr3 nanowires is enhanced by 40% by adopting a semiconductor nanwire/dielectric/Ag film sandwich structure. A Rabi splitting energy up to 595 meV is achieved as the dielectric thickness is 5 nm. Later, we demonstrated a room temperature, low-threshold green plasmonic laser in the same configuration.