Rapid and Holistic Technology Evaluation for Exploratory DTCO in Beyond 7nm Technologies

M. Na, A. Chu, Yoo-mi Lee, A. Young, V. Zalani, Hung Tran
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引用次数: 1

Abstract

New device architectures such as horizontal Nanosheets have been seriously considered as a replacement for FinFET. A comprehensive, and realistic assessment of these architectures at the early stages of technology development is indispensable to understand their value propositions. In this study a new holistic technology-evaluation methodology for an early technology assessment is proposed. This methodology closely links performance-power metrics to realistic area scaling using block area assessment. This is especially critical for lower track cells since routing complexity can severely degrade performance. In addition, the optimization of an M1 power staple design combined with this evaluation can provide 12% additional area reduction with less than 1% of inverter performance penalty.
超7nm技术中探索性DTCO的快速全面技术评估
新的器件架构,如水平纳米片已经被认真考虑作为FinFET的替代品。在技术开发的早期阶段对这些架构进行全面的、现实的评估对于理解它们的价值主张是必不可少的。本文提出了一种用于早期技术评估的整体技术评估方法。该方法将性能-功率指标与使用块面积评估的实际面积缩放紧密联系起来。这对于低轨道单元尤其重要,因为路由复杂性会严重降低性能。此外,M1电源短钉设计的优化与此评估相结合,可以在逆变器性能损失不到1%的情况下提供12%的额外面积减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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