A Two-stage Area-efficient High Input Impedance CMOS Amplifier for Neural Signals

Erwin H. T. Shad, M. Molinas, T. Ytterdal
{"title":"A Two-stage Area-efficient High Input Impedance CMOS Amplifier for Neural Signals","authors":"Erwin H. T. Shad, M. Molinas, T. Ytterdal","doi":"10.1109/DTS52014.2021.9498105","DOIUrl":null,"url":null,"abstract":"In this article, a two-stage area-efficient high input impedance neural amplifier is proposed. It has been shown that two single-stage amplifiers with low gain will consume less area in comparison with a single-stage high gain amplifier for capacitively coupled amplifiers. Besides, splitting a high gain amplifier into two single-stages in this structure leads to achieving a higher input impedance at the end. Furthermore, it helps to boost the input impedance at a higher frequency. The robustness of the proposed structure is investigated by process and mismatch Monte Carlo simulations. All the simulations are run using in a commercially available 0.18 μm CMOS technology. Based on post-layout simulation, the proposed two-stage amplifier has 53 dB mid-band gain in the bandwidth of 5 Hz to 10 kHz. The input impedance is 2.8 GΩ and 56 MΩ at 1 kHz and 10 kHz, respectively. In comparison to a single-stage amplifier, the proposed structure boosted the input impedance at frequencies up to 1 kHz by a factor of 10 while the power consumption increased only 0.5 μW. Furthermore, the proposed two-stage neural amplifier area consumption is 0.02 mm2 without pads which decreased area consumption by a factor of 3.","PeriodicalId":158426,"journal":{"name":"2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTS52014.2021.9498105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this article, a two-stage area-efficient high input impedance neural amplifier is proposed. It has been shown that two single-stage amplifiers with low gain will consume less area in comparison with a single-stage high gain amplifier for capacitively coupled amplifiers. Besides, splitting a high gain amplifier into two single-stages in this structure leads to achieving a higher input impedance at the end. Furthermore, it helps to boost the input impedance at a higher frequency. The robustness of the proposed structure is investigated by process and mismatch Monte Carlo simulations. All the simulations are run using in a commercially available 0.18 μm CMOS technology. Based on post-layout simulation, the proposed two-stage amplifier has 53 dB mid-band gain in the bandwidth of 5 Hz to 10 kHz. The input impedance is 2.8 GΩ and 56 MΩ at 1 kHz and 10 kHz, respectively. In comparison to a single-stage amplifier, the proposed structure boosted the input impedance at frequencies up to 1 kHz by a factor of 10 while the power consumption increased only 0.5 μW. Furthermore, the proposed two-stage neural amplifier area consumption is 0.02 mm2 without pads which decreased area consumption by a factor of 3.
一种用于神经信号的两级面积高效高输入阻抗CMOS放大器
本文提出了一种两级面积高效高输入阻抗神经放大器。研究表明,对于电容耦合放大器,与单级高增益放大器相比,两个低增益单级放大器消耗的面积更小。此外,在这种结构中,将高增益放大器分成两个单级会导致最终获得更高的输入阻抗。此外,它有助于在更高的频率上提高输入阻抗。通过过程和失配蒙特卡罗仿真研究了该结构的鲁棒性。所有的模拟都是在商用0.18 μm CMOS技术上运行的。基于布局后仿真,该两级放大器在5 Hz ~ 10 kHz的带宽范围内具有53 dB的中频增益。在1 kHz和10 kHz时,输入阻抗分别为2.8 GΩ和56 MΩ。与单级放大器相比,该结构将频率高达1khz的输入阻抗提高了10倍,而功耗仅增加0.5 μW。此外,所提出的两级神经放大器面积消耗为0.02 mm2,不含衬垫,面积消耗减少了3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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