Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for Solid State Transformer (SST) application

Abstract

An improved bidirectional medium voltage AC-DC converter based on 10kV silicon carbide (SiC) MOSFETs for SST (Solid State Transformer) application is presented in this paper. Avalanche breakdown of the reverse blocking silicon diode and bridge arm shoot-through problems in traditional high voltage bridge-type AC-DC converters are solved. Shoot-through currents are limited to low di/dt events that are readily controlled, allowing zero dead-time operation. The reverse recovery dissipation of the SiC MOSFET is eliminated because no freewheeling current will flow through the body diode. This increases the efficiency as well as the reliability of the SiC MOSFET. Detailed power stage operating principles and energy transfer mechanism are described. A unique customized 10kV SiC MOSFET/JBS diode power module is developed and tested, which further reduces parasitic parameters and simplifies converter wire connection. This topology is therefore a very good choice for median voltage applications.