A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI:10.1109/RFIC.2004.1320622

J. Deng, P. Gudem, L. Larson, P. Asbeck

引用次数: 11

Abstract

This paper demonstrates a WCDMA single-stage power amplifier, fabricated in a 0.25 /spl mu/m SiGe BiCMOS process. With dynamic biasing of the collector current, the average power efficiency is improved by more than a factor of two compared to a typical class AB power amplifier. The power amplifier satisfies the 3GPP class-III WCDMA adjacent channel power ratio (ACPR) specifications (ACPR_5M= -33 dBc and ACPR_10M = -58.8 dBc) with 23.9 dBm average channel output power. The measured output power at the 1 dB compression point is 25.9 dBm.

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一种具有动态电流偏置的高效SiGe BiCMOS WCDMA功率放大器，可提高平均效率

本文介绍了一种以0.25 /spl μ m SiGe BiCMOS工艺制作的WCDMA单级功率放大器。由于集电极电流的动态偏置，与典型的AB类功率放大器相比，平均功率效率提高了两倍以上。该功率放大器满足3GPP iii类WCDMA邻近通道功率比(ACPR)规范(ACPR_5M= -33 dBc, ACPR_10M = -58.8 dBc)，通道平均输出功率为23.9 dBm。在1db压缩点测得的输出功率为25.9 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers

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