An Efficient Temperature-Dependent S-Parameter Calibration Routine

Julian R. Martin, L. Dunleavy, A. S. Fernandez
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引用次数: 1

Abstract

To obtain accurate temperature-dependent S-parameters of on-wafer devices as well as packaged components, S-parameter calibrations should be established at each temperature. A BASIC program is described here that provides an efficient means of performing LRM and TRL calibrations at multiple temperatures. This program employs the "SIMs" calibration procedure available on the HP8510 ANA. An external computer is used to store raw calibration data, which is then fed back to the ANA to set up separate calibration sets for each desired temperature. To illustrate the procedure, temperature dependent S-parameter measurement data is presented for a 0.5um × 300um MESFET. Data will also be presented to show that proper calibration at each measurement temperature is needed to derive accurate temperature dependent device models.
一种有效的温度相关s参数校准程序
为了获得晶圆上器件以及封装元件的精确温度相关s参数,应在每个温度下建立s参数校准。这里描述了一个BASIC程序,它提供了在多个温度下执行LRM和TRL校准的有效方法。本程序采用HP8510 ANA上可用的“SIMs”校准程序。外部计算机用于存储原始校准数据,然后将其反馈给ANA,以便为每个所需温度设置单独的校准集。为了说明这一过程,给出了0.5um × 300um MESFET的温度相关s参数测量数据。数据还将显示,在每个测量温度下需要适当的校准,以获得准确的温度相关器件模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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