A new physics based SPICE model for NPT IGBTs

Abstract

A physics based, non-punch-through, insulated gate bipolar transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. Developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) through a variational formulation, with one-dimensional simplex finite elements. Model implementation, in a circuit simulator, is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using standard methods. Thus, this new hybrid model combines advantages of numerical and mathematical methods, through modeling charge carrier behavior with high accuracy even maintaining low execution times.