{"title":"High Performance Gnrfet Based Serializer","authors":"Avinash Yadav, Mounica Patnala, M. Rizkalla","doi":"10.1109/NAECON46414.2019.9057943","DOIUrl":null,"url":null,"abstract":"ULSI technology is characterized by high speed and low power devices with nano scale features. Scaling down the silicon devices has come to an end due to its physical limitations with ballistic effects. For high speed data transmission, conversion of object codes into serial data, will require high speed serialized devices. GNRFET with channel length of nearly 10nm is used in this study to implement 2:1 serializer. A negative edge triggered D-flipflops and transmission gate 2:1 multiplexer were used in the design. ADS (Advanced Design System) tools were used with 0.7V power for biasing the devices. The data obtained in this work was compared with standard CMOS serializer for addressing the features of these nano scale technology for this application. The power consumption of the serializer was found to be 0.4mW.","PeriodicalId":193529,"journal":{"name":"2019 IEEE National Aerospace and Electronics Conference (NAECON)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE National Aerospace and Electronics Conference (NAECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON46414.2019.9057943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
ULSI technology is characterized by high speed and low power devices with nano scale features. Scaling down the silicon devices has come to an end due to its physical limitations with ballistic effects. For high speed data transmission, conversion of object codes into serial data, will require high speed serialized devices. GNRFET with channel length of nearly 10nm is used in this study to implement 2:1 serializer. A negative edge triggered D-flipflops and transmission gate 2:1 multiplexer were used in the design. ADS (Advanced Design System) tools were used with 0.7V power for biasing the devices. The data obtained in this work was compared with standard CMOS serializer for addressing the features of these nano scale technology for this application. The power consumption of the serializer was found to be 0.4mW.