High Performance Gnrfet Based Serializer

Avinash Yadav, Mounica Patnala, M. Rizkalla
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Abstract

ULSI technology is characterized by high speed and low power devices with nano scale features. Scaling down the silicon devices has come to an end due to its physical limitations with ballistic effects. For high speed data transmission, conversion of object codes into serial data, will require high speed serialized devices. GNRFET with channel length of nearly 10nm is used in this study to implement 2:1 serializer. A negative edge triggered D-flipflops and transmission gate 2:1 multiplexer were used in the design. ADS (Advanced Design System) tools were used with 0.7V power for biasing the devices. The data obtained in this work was compared with standard CMOS serializer for addressing the features of these nano scale technology for this application. The power consumption of the serializer was found to be 0.4mW.
基于gnret的高性能序列化器
ULSI技术的特点是具有纳米级特征的高速低功耗器件。由于硅器件的物理限制和弹道效应,缩小硅器件的规模已经走到了尽头。对于高速数据传输,将目标代码转换为串行数据,将需要高速串行设备。本研究采用通道长度接近10nm的GNRFET实现2:1串行化。设计中采用了负沿触发d触发器和传输门2:1多路复用器。ADS (Advanced Design System)工具使用0.7V电源对器件进行偏置。通过与标准CMOS串行化器的比较,探讨了纳米技术在该应用中的特点。发现串联器的功耗为0.4mW。
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