New aspects for investigation of carrier transition through deep levels in GaAs by a piezoelectric photoacoustic technique

A. Fukuyama, M. Iwamoto, Y. Akashi, T. Ikari, M. Suemitsu
{"title":"New aspects for investigation of carrier transition through deep levels in GaAs by a piezoelectric photoacoustic technique","authors":"A. Fukuyama, M. Iwamoto, Y. Akashi, T. Ikari, M. Suemitsu","doi":"10.1109/ULTSYM.1999.849478","DOIUrl":null,"url":null,"abstract":"The temperature variation of the piezoelectric photoacoustic (PPA) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four distinctive peaks at 50, 70, 110 and 125 K were observed. From the theoretical analysis based on the rate equations of electrons in the conduction band and several deep levels, we concluded that two distinctive peaks at 70 and 125 K were due to the nonradiative recombination of photoexcited electrons from EL2 to EL6+ and EL10+/EL11+ deep levels, respectively. Deep levels with extremely low concentration (1012-1015 cm-3) were clearly detected in SI-GaAs by using PPA method for the first time.","PeriodicalId":339424,"journal":{"name":"1999 IEEE Ultrasonics Symposium. Proceedings. International Symposium (Cat. No.99CH37027)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE Ultrasonics Symposium. Proceedings. International Symposium (Cat. No.99CH37027)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.1999.849478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The temperature variation of the piezoelectric photoacoustic (PPA) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four distinctive peaks at 50, 70, 110 and 125 K were observed. From the theoretical analysis based on the rate equations of electrons in the conduction band and several deep levels, we concluded that two distinctive peaks at 70 and 125 K were due to the nonradiative recombination of photoexcited electrons from EL2 to EL6+ and EL10+/EL11+ deep levels, respectively. Deep levels with extremely low concentration (1012-1015 cm-3) were clearly detected in SI-GaAs by using PPA method for the first time.
利用压电光声技术研究砷化镓深层载流子跃迁的新方面
测量了半绝缘(SI) GaAs材料在20 ~ 150 K范围内的压电光声(PPA)信号强度的温度变化。在50、70、110和125 K处观察到四个不同的峰。基于电子在传导带和几个深能级的速率方程的理论分析,我们得出两个不同的峰在70和125 K分别是由于光激发电子从EL2到EL6+和EL10+/EL11+的非辐射复合。利用PPA方法首次在SI-GaAs中清晰检测到极低浓度(1012-1015 cm-3)的深层水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信