Design of amorphous silicon photonic crystal-based M-Z modulator operating at 1.55 μm

S. Rao, M. Casalino, G. Coppola, R. Kisacik, T. Tekin, F. D. Della Corte
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Abstract

The design of an amorphous silicon-based Mach-Zehnder electro-optic modulator including two guiding p-i-n structures integrated inside a two-dimensional (2-D) photonic crystal (PhC) working at 1.55 μm, is reported. Electrically induced free carrier dispersion effect in this photonic material with a very cost-effective technology, is investigated for modulation. Our numerical analysis, performed by a time-domain (FDTD)-based software, proves that the voltage-length product can be remarkably reduced by taking advantage of both the strong PhC confinement and the wide refractive index tunability of amorphous silicon.
工作波长为1.55 μm的非晶硅光子晶体M-Z调制器的设计
本文报道了一种工作在1.55 μm的二维光子晶体(PhC)内的非晶硅基Mach-Zehnder电光调制器的设计,该调制器包含两个导向p-i-n结构。以一种非常经济的技术研究了这种光子材料的电诱导自由载流子色散效应。我们通过时域(FDTD)软件进行的数值分析证明,利用非晶硅的强PhC约束和宽折射率可调性,可以显著降低电压-长度乘积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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