High power and small aspect ratio 980 nm ridge waveguide laser diodes consisted of asymmetrically expanded optical field normal to the active layer

Abstract

The new ridge waveguide LD consisted of layers to support asymmetrically expanded optical field normal to the active layer has been proposed in order to satisfy the increase of kink free output power and the reduction of aspect ratio. More than 650 mW kink free output power and less than 2.5 aspect ratio have been achieved by the proposed LD. Good aging performances are also expressed in the proposed LD. It is believed that the LDs are suitable for realizing 980 nm modules with high coupling efficiency and high power EDFAs.