S-band GaN PolHEMT power amplifier

Abstract

Under PolHEMT project focused on AlGaN/GaN HEMT on truly bulk semi-insulating GaN substrate technology development a power amplifier using this type of polish transistor was designed and fabricated. The amplifier achieves the parameters as follow: output power at 1dB G.C.P. more than 31dBm, max power density of 4,15W/mm, small-signal gain |S21|>12,5dB, over a 2,5GHz to 3,5GHz frequency range.