M. A. Wibisono, A. Ridwan, M. R. Hidayat, H. Nusantara, A. Munir
{"title":"13.56MHz CMOS-Based Crystal Oscillator for Wireless Power Transfer Application","authors":"M. A. Wibisono, A. Ridwan, M. R. Hidayat, H. Nusantara, A. Munir","doi":"10.1109/ICWT.2018.8527813","DOIUrl":null,"url":null,"abstract":"This paper deals with the development of CMOS-based crystal oscillator works on the frequency of 13.56MHz for wireless power transfer (WPT) application. The use of a 13.56MHz crystal and a 74HC04N CMOS integrated circuit (IC) as main parts of oscillator is aimed to have a stable sine wave generator in compact configuration. In order to have good impedance matching, a common collector BJT amplifier is applied as an impedance matching circuit. The oscillator as well as the impedance matching circuit are deployed on a single layer of FR4 epoxy dielectric substrate with the thickness of 1.6mm. The characterization result demonstrates that the proposed oscillator could generate a stable sine wave at the frequency of 13.56MHz with the output signal level of −4.79dBm, in which this is suitable for WPT application.","PeriodicalId":356888,"journal":{"name":"2018 4th International Conference on Wireless and Telematics (ICWT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Wireless and Telematics (ICWT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICWT.2018.8527813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper deals with the development of CMOS-based crystal oscillator works on the frequency of 13.56MHz for wireless power transfer (WPT) application. The use of a 13.56MHz crystal and a 74HC04N CMOS integrated circuit (IC) as main parts of oscillator is aimed to have a stable sine wave generator in compact configuration. In order to have good impedance matching, a common collector BJT amplifier is applied as an impedance matching circuit. The oscillator as well as the impedance matching circuit are deployed on a single layer of FR4 epoxy dielectric substrate with the thickness of 1.6mm. The characterization result demonstrates that the proposed oscillator could generate a stable sine wave at the frequency of 13.56MHz with the output signal level of −4.79dBm, in which this is suitable for WPT application.