Investigation of Bi-Layer Structure Ceramics

Chen Da-Ren
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引用次数: 1

Abstract

P i e m e l e c t r i c ceramic with BL-layer s t ruc tu re are good transducer materials being suitable to use i n high temperature. They possess high Curie tenperature, low d i e l e c t r i c constant and the s tab1 In view of t h i s matter, it is a t t r a c t i v e to us to fur ther develop material and explore why they can provide these characteristics. behavior under the stress and/or the temperat Jl . x 2 1 t h e performances of these Experiments and r e s u l t s 1. Preparation Ceramic samples with t h e mlecular f o m l a Bi4LMI'i&2awere grepared and tested i n t h i s paper, where , Sr , Ba" and Pb" . Their abbreviat i o n are BCT, BST, BBT and BFT. For the ceramics with Bi-layer structure, owing to t h e i r very high coercive f i e l d Ec, they have to bear serious poling condition, so as t o rmst have high density and high hanzgeneity as f a r as possible. In our experiment t he s t i r r i n g dry method w a s used a f t e r t he batches had been wet mixed to ensure high density and high hcrsgeneity f o r these ceramics. The dens i t ies of these ceramic samples with d i f f e ren t ampositions and s in t e r ing temperatures are listed i n Tab. 1, and Fig. 1 shows t h e i r corresponding microstructure. Tab. 1 Sintering, dielectric and p iezoe lec t r ic pmperties of BCT, BST, BBT and BPT ceramics. Fig. 1. Electron micrograph of BCT, BST, BBT and BKT ceramics. x 5000 2. Dielectric and p iezoe lec t r ic proper t ies measured on d i f f e ren t samples with diameter of 10 mn and thickness of 0.5 m. These r e s u l t s are shown i n Tab. 1 and Fig. 2. I t shows tha t t he d i e l e c t r i c and p iezoe lec t r ic proper t ies of these ceramics are bas ica l ly similar t o each other: d 3 =16-20~16'~ c /n , E~l60-250, tand=0.005-0.02, except the d i f f e ren t Curie temperatures ranging f m 400°C to-48W°C. The saturated fe r roe lec t r i c hys te res i s 1pps of BST ceramics at roan tanperature and 150 C were also measured by using quasis tatic electric f i e l d method (0.1 c / s ) . The values of spontaneous polarization Ps, coercive f i e l d E c and saturated electric f i e l d E s determined from these loops shown i n Fig. 3 are of 1 2 , u c / ~ , 80 Kv/m and 150 Kv/m a t room temperature respectively. Dielectric and p iezoe lec t r ic proper t ies were 3. S t a b i l i t i e s of proper t ies The ceramics samples with the abbreviation BST were selected to measure t h e i r s t a b i l i t i e s . (1) S t a b i l i t y of p iezoe lec t r ic coef f ic ien t dS3 with temperature. The s t a b i l i t y of p iezoe lec t r ic coef f ic ien t 105 CH2358-O/R6/0000-0165 $1 d0 @ 19R6 IEEE Tab. 2 Change i n capacitance C and p iezoe lec t r ic e f f i c i e n t dm of BST ceramics a f t e r heat treatment
双层结构陶瓷的研究
P - 1是一种具有b - 1层的陶瓷材料,是一种适合在高温下使用的优良换能器材料。它们具有高居里温度,低居里温度,低居里常数,低居里常数,高居里常数,高居里常数,高居里常数,高居里常数,高居里常数,高居里常数,高居里常数,高居里常数,高居里常数。在压力和/或温度下的行为。本文对这些实验的性能进行了分析,并对实验结果进行了分析。在本文中,我们制备了以Bi4LMI为分子的陶瓷样品,并对其进行了测试,其中Sr, Ba, Pb。他们的缩写是BCT, BST, BBT和BFT。对于双层结构的陶瓷,由于其具有非常高的矫顽力,因此必须承受严重的极化条件,从而尽可能地使其具有高密度和高合金性。在我们的实验中,我们使用了一种干燥的方法,即采用湿法混合的方法,以确保这些陶瓷的高密度和高均匀性。表1列出了这些陶瓷样品在不同温度下的晶状体、晶状体和晶状体的晶状体,其显微结构如图1所示。表1 BCT、BST、BBT和BPT陶瓷的烧结、介电和光电性能。图1所示。BCT, BST, BBT和BKT陶瓷的电子显微照片。x5000 2。在直径为10 μ m、厚度为0.5 μ m的三种样品上测量了介电和光电特性。表1和图2显示了这些参数。结果表明,除了居里温度为400℃~ 48w℃的陶瓷外,这两种陶瓷的温度分布基本相似:d3 =16 ~ 20~16′~ c /n, e ~16 ~ 250, t =0.005 ~ 0.02。采用准静态电流法(0.1 c / s)测定了BST陶瓷在常温和150℃下的饱和电流和饱和电流。由图3所示的这些回路测得的自发极化p、矫顽力f、ec和饱和电态f、e在室温下分别为1.2、1.5、80 Kv/m和150 Kv/m。介电和光电耦合系数为3。选取简写为BST的陶瓷样品,对其进行了测量。(1) S (1) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3) S (3))表2 BST陶瓷的电容量C和电容量C的变化,以及热处理后BST陶瓷的电容量C和电容量C的变化
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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