A small-area self-biased wideband CMOS balun LNA with noise cancelling and gain enhancement

Abstract

In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses self-biasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverter-based circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz–1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.