Negative differential conductivity of semiconductor diode with resonance-tunnel border

E. Prokhorov, O. Botsula
{"title":"Negative differential conductivity of semiconductor diode with resonance-tunnel border","authors":"E. Prokhorov, O. Botsula","doi":"10.1109/MSMW.2010.5546144","DOIUrl":null,"url":null,"abstract":"1. The diodes of n+-n-n+ with tunnel or resonance-tunnel scopes possess negative differential conductivity (ODP) because of tunneling or resonance tunneling of electrons through the lateral scopes of diodes is showed. 2 The n+-n-n+ diodes with tunnel or resonance-tunnel scopes can be fabricated in a co-planar and in «sandwich» structures is showed. 3. I – V characteristics of n+-n-n+ diodes are analyzed taking into account tunnel or resonance-tunnel is have been analyzed. The region of negative differential conductivity is determined by parameters of tunnel and resonance-tunnel scopes, material of operating diode region and geometry of structure. 4. Large non-linearity of I – V characteristics of considered diodes at small bias voltage can be used for frequency multiplication in millimeter wave range.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSMW.2010.5546144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

1. The diodes of n+-n-n+ with tunnel or resonance-tunnel scopes possess negative differential conductivity (ODP) because of tunneling or resonance tunneling of electrons through the lateral scopes of diodes is showed. 2 The n+-n-n+ diodes with tunnel or resonance-tunnel scopes can be fabricated in a co-planar and in «sandwich» structures is showed. 3. I – V characteristics of n+-n-n+ diodes are analyzed taking into account tunnel or resonance-tunnel is have been analyzed. The region of negative differential conductivity is determined by parameters of tunnel and resonance-tunnel scopes, material of operating diode region and geometry of structure. 4. Large non-linearity of I – V characteristics of considered diodes at small bias voltage can be used for frequency multiplication in millimeter wave range.
具有共振隧道边界的半导体二极管的负差分电导率
1. 采用隧道或共振隧道示波器的n+-n-n+二极管由于电子在二极管的横向示波器中隧穿或共振隧穿而具有负的差分电导率(ODP)。具有隧道或共振隧道范围的n+-n-n+二极管可以在共面和“三明治”结构中制造。3.分析了n+-n-n+二极管的I - V特性,考虑了隧道和共振隧道。负差分电导率的范围由隧道和谐振隧道范围的参数、工作二极管区域的材料和结构的几何形状决定。4. 所考虑的二极管在小偏置电压下的I - V特性的大非线性可用于毫米波范围内的倍频。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信