A Stochastic Model for Electron-Hole Annihilation by Tunneling and Diffusion Based on a Nonlinear Smoluchowski Equations

Abstract

Based on a stochastic algorithm for simulation of annihilation of spatially separate electrons and holes in a disordered semiconductor, we present numerical results for the photon flux and luminescence in semiconductors. The model is based on the spatially inhomogeneous, nonlinear Smoluchowski equations with random initial distribution density. In the talk we focus on the segregation effect which we have found under certain reaction conditions.