Engineering Low Dark Current Density for Ge-on-Si Photodiodes

Abstract

We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al2O3 deposition at 250C removes all peripheral leakage components. These processes yield a mean value of Jd = 160nA/cm² at -1V.