Exploring test opportunities for memory and interconnects in 3D ICs

M. Taouil, M. Lefter, S. Hamdioui
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引用次数: 7

Abstract

3D-Stacked IC (3D-SIC) based on Through-Silicon-Vias (TSV) is an emerging technology that provides many benefits such as low power, high bandwidth 3D memories and heterogeneous integration. One of the attractive applications making used of such benefits is the stacking of memory dies on logic. System integrators for such application have to provide appropriate test strategy. However, they have to deal with block box IPs as IP providers usually refuse to share the IP content. Moreover, they dislike including JTAG in memory dies. Therefore, developing a low cost and high quality test approaches, while taking these constraints into consideration, is of great importance. This paper presents a framework of interconnect test approaches for memories stacked on logic, and look further than the only proposed JTAG solutions. The benefits and drawbacks of each possible solution is extensively discusses for stacked memories both with and without MBISTs, placed on the memory dies or on a separate logic die.
探索3D集成电路中存储器和互连的测试机会
基于通硅通孔(TSV)的3D堆叠集成电路(3D- sic)是一项新兴技术,具有低功耗、高带宽3D存储器和异构集成等诸多优点。利用这种优势的一个有吸引力的应用是在逻辑上堆叠内存。对于这样的应用,系统集成商必须提供适当的测试策略。然而,由于IP提供商通常拒绝共享IP内容,他们不得不处理块盒IP。而且,他们不喜欢在内存中包含JTAG。因此,开发一种低成本和高质量的测试方法,同时考虑到这些限制,是非常重要的。本文提出了堆叠在逻辑上的存储器的互连测试方法的框架,并进一步探讨了唯一提出的JTAG解决方案。本文广泛讨论了每种可能解决方案的优点和缺点,这些解决方案适用于有或没有mbist的堆叠存储器,放置在内存芯片上或单独的逻辑芯片上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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